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256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash
Write AC Characteristics
Figure 22: WE#-Controlled Program AC Timing (8-Bit Mode)
t WC
3rd Cycle
4th Cycle
Data Polling
t WC
READ Cycle
A[MAX:0]/A-1
t CS
AAAh
t AS
t C H
PA
t AH
PA
t E
CE#
OE#
WE#
t GHWL
t WP
t WPH
t OE
t DS
t WHWH1
t DF
t OH
DQ[7:0]
AOh
PD
DQ7#
D OUT
D OUT
t DH
Notes:
1. Only the third and fourth cycles of the PROGRAM command are represented. The PRO-
GRAM command is followed by checking of the status register data polling bit and by a
READ operation that outputs the data (D OUT ) programmed by the previous PROGRAM
command.
2. PA is the address of the memory location to be programmed. PD is the data to be pro-
grammed.
3. DQ7 is the complement of the data bit being programmed to DQ7 (See Data Polling Bit
[DQ7]).
4. See the following tables for timing details: Read AC Characteristics, WE#-Controlled
Write AC Characteristics, and CE#-Controlled Write AC Characteristics.
PDF: 09005aef849b4b09
m29ew_256mb_2gb.pdf - Rev. B 8/12 EN
63
Micron Technology, Inc. reserves the right to change products or specifications without notice.
? 2012 Micron Technology, Inc. All rights reserved.
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